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Influence of Rapid Thermal Annealing on Thermal Donor Formation and Oxygen Precipitation in Czochralski Silicon

著者名:
掲載資料名:
Proceedings of the Third International Symposium on Defects in Silicon
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
99-1
発行年:
1999
開始ページ:
150
終了ページ:
161
総ページ数:
12
出版情報:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566772235 [1566772230]
言語:
英語
請求記号:
E23400/99-1
資料種別:
国際会議録

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