High temperature Stable W and WSi contacts on n- and p-GaN | 東京工業大学附属図書館文献データベース

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High temperature Stable W and WSi contacts on n- and p-GaN

著者名:

Abernathy, C.R.

さらに 5 件

掲載資料名:

Proceedings of the third Symposium on III-V Nitride Materials and Processes

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

98-18

発行年:

1998

開始ページ:

208

終了ページ:

214

総ページ数:

7

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772129 [1566772125]

言語:

英語

請求記号:

E23400/98-18

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013921
シリーズID:	PA00000028
会議名:	Symposium on III-V Nitride Materials and Processes
回次:	3rd
会議開催地:	Boston, MA, USA
会議開催年:	1998.11.01-1998.11.06

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1 国際会議録 *Temperature Effect of Metal contacts on GaN Ren, F., Chu, S.N.G., Lothian, J.R., Pearton, S.J., Abernathy, C.R., Baca, A.G., Han, J., Schurman, M.J., Hong, M., Cao, … Electrochemical Society	7 国際会議録 Ultrahigh Implant Activation Efficiency in GaN Using Novel High Temperature RTP System Cao, X. A., Abernathy, C. R., Singh, R. K., Pearton, S. J., Fu, M., Sarvepalli, V., Sekhar, J. A., Zolper, J. C., … MRS - Materials Research Society
2 国際会議録 Behavior of W and WSix Contact Metallization on n- and P-Type GaN Cao, X. A., Ren, F., Lothian, J. R., Pearton, S. J., Abernathy, C. R., Zolper, J. C., Cole, M. W., Zeitouny, A., … MRS - Materials Research Society	8 国際会議録 GaN Power Devices Pearton, S.J., Ren, F., Zhang, A.P., Dang, G., Cac, X.A., Lee, K.P., Cho, H., Gila, B.P., Johnson, J.W., Monier, C., … Electrochemical Society
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