Threading defect reduction in laterally overgrown GaN films by Hydride Vapor Phase Epitaxy

Threading defect reduction in laterally overgrown GaN films by Hydride Vapor Phase Epitaxy

著者名:

Doppalapudi, D.

掲載資料名:

Proceedings of the third Symposium on III-V Nitride Materials and Processes

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

98-18

発行年:

1998

開始ページ:

87

終了ページ:

98

総ページ数:

12

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772129 [1566772125]

言語:

英語

請求記号:

E23400/98-18

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013921
シリーズID:	PA00000028
会議名:	Symposium on III-V Nitride Materials and Processes
回次:	3rd
会議開催地:	Boston, MA, USA
会議開催年:	1998.11.01-1998.11.06

類似資料:

1 国際会議録 GaN Laterally Overgrown on Sapphire by Low Pressure Hydride Vapor Phase Epitaxy Napierala, J., Martin, D., Buehlmann, H.J., Gradecak, S., Ilegems, M. Trans Tech Publications	7 国際会議録 Organometallic Vapor-Phase Lateral Epitaxy of Low Defect Density GaN Layers Nam, O. H., Zheleva, T. S., Bremser, M. D., Thomson, D. B., Davis, R. F. MRS - Materials Research Society
2 国際会議録 Electron Mobility of n-Type GaN Films Ng, H. M., Doppalapudi, D., Singh, R., Moustakas, T. D. MRS - Materials Research Society	8 国際会議録 GaN photodiodes grown by MBE on HVPE and ELO-HVPE GaN/sapphire substrates Sampath,A.V., Iliopoulos,E., Seth,K., Fedyunin,Y., Misra,M., Ng,H.M., Lamarre,P., Feit,Z., Moustakas,T.D. SPIE - The International Society for Optical Engineering
3 国際会議録 Growth and characterisation of free-standing hydride vapor phase epitaxy GaN on two-step epitaxial lateral overgrown GaN template Gogova, D., Kanev, S., Monemar, B., Ivanov, I. G., Yakimova, R., Talik, E. Electrochemical Society	9 国際会議録 Near Bandgap Photoluminescence Broadening in n-GaN Films Iliopoulos, E., Doppalapudi, D., Ng, H. M., Moustakas, T. D. MRS - Materials Research Society
4 国際会議録 Effect of Nitridation and Buffer in GaN Films Grown on A-Plane (11-20) Sapphire Doppalapudi, D., Iliopoulos, E., Basu, S. N., Moustakas, T. D. MRS - Materials Research Society	10 国際会議録 Phase Separation and Ordering in InGaN Alloys Doppalapudi, D., Basu, S. N., Moustakas, T. D. MRS - Materials Research Society
5 国際会議録 Distributed Bragg reflectors based on AlN/GaN multilayers Ng. H.M., Doppalapudi, D., Iliopoulos, E., Moustakas, T.D. Electrochemical Society	11 国際会議録 GaN Schottky diode ultraviolet detectors grown by molecular beam epitaxy Misra,M., Sampath,A.V., Iliopoulos,E., Moustakas,T.D. SPIE - The International Society for Optical Engineering
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