Minority Carrier Diffusion Length Changes in Si Substrate Due to a High Temperature Annealing
- 著者名:
- 掲載資料名:
- Proceedings of the Fifth International Symposium on High Purity Silicon V
- シリーズ名:
- Electrochemical Society Proceedings Series
- シリーズ巻号:
- 98-13
- 発行年:
- 1998
- 開始ページ:
- 304
- 終了ページ:
- 312
- 出版情報:
- Pennington, NJ: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566772075 [1566772079]
- 言語:
- 英語
- 請求記号:
- E23400/98-13
- 資料種別:
- 国際会議録
類似資料:
Electrochemical Society |
MRS - Materials Research Society |
2
国際会議録
Characterization of diffusion length of minority carriers in(CdZn)Te at temperatures of 80 to 300 K
SPIE - The International Society for Optical Engineering |
MRS - Materials Research Society |
Electrochemical Society |
9
国際会議録
CORRELATION BETWEEN MINORITY CARRIER DIFFUSION LENGTH AND MICROSTRUCTURE IN a-Si:H THIN FILMS
Materials Research Society |
4
国際会議録
Impact of silicon substrate oxygen precipitation fine tuning on high density memories retention time
Electrochemical Society | |
MRS - Materials Research Society |
Electrochemical Society |
Materials Research Society |
12
国際会議録
TEMPERATURE DEPENDENCE OF OPTICAL PROPERTIES AND MINORITY CARRIER DIFFUSION LENGTH IN a-SiGe:H,F
Materials Research Society |