Effect of Substrate Defects on GOI of Ultra-Thin Gate Oxides

Effect of Substrate Defects on GOI of Ultra-Thin Gate Oxides

著者名:

掲載資料名:

Proceedings of the Fifth International Symposium on High Purity Silicon V

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

98-13

発行年:

1998

開始ページ:

258

終了ページ:

263

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772075 [1566772079]

言語:

英語

請求記号:

E23400/98-13

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013916
シリーズID:	PA00000028
会議名:	International Symposium on High Purity Silicon ; Meeting of the Elecrochemical Society
回次:	5th ; 194th
会議開催地:	Boston, MA, USA
会議開催年:	1998.11.02-1998.11.06

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4 国際会議録 Effect of Cl in Gate Oxidation Mertens, P. W., McGeary, M. J., Schaekers, M., Sprey, H., Vermeire, B., Depas, M., Meuris, M., Heyns, M. M. MRS - Materials Research Society	10 国際会議録 Modeling Soft Breakdown of Ultrathin Gate Oxide Layers Houssa, M., Mertens, P. W., Heyns, M. M. MRS - Materials Research Society
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