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The Engineering of Silicon Wafer Material Properties Through Vacancy Concentration Profile Control and the Achievement of Ideal Oxygen Precipitation Behaviour

著者名:
掲載資料名:
Proceedings of the Fifth International Symposium on High Purity Silicon V
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
98-13
発行年:
1998
開始ページ:
135
終了ページ:
146
出版情報:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566772075 [1566772079]
言語:
英語
請求記号:
E23400/98-13
資料種別:
国際会議録

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