Formation Behaviour of Grown-in Defects in Silicon During Czochralski Crystal Growth
- 著者名:
Saishoji, T. Nakamura, K. Nakajima, H. Yokoyama, T. Ishikawa, F. Tomioka, J. - 掲載資料名:
- Proceedings of the Fifth International Symposium on High Purity Silicon V
- シリーズ名:
- Electrochemical Society Proceedings Series
- シリーズ巻号:
- 98-13
- 発行年:
- 1998
- 開始ページ:
- 28
- 終了ページ:
- 40
- 出版情報:
- Pennington, NJ: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566772075 [1566772079]
- 言語:
- 英語
- 請求記号:
- E23400/98-13
- 資料種別:
- 国際会議録
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