Oxygen Transport in the Czochralski Growth of 300 mm Diameter Silicon Crystal

Oxygen Transport in the Czochralski Growth of 300 mm Diameter Silicon Crystal

著者名:

掲載資料名:

Proceedings of the Fifth International Symposium on High Purity Silicon V

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

98-13

発行年:

1998

開始ページ:

17

終了ページ:

27

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772075 [1566772079]

言語:

英語

請求記号:

E23400/98-13

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013916
シリーズID:	PA00000028
会議名:	International Symposium on High Purity Silicon ; Meeting of the Elecrochemical Society
回次:	5th ; 194th
会議開催地:	Boston, MA, USA
会議開催年:	1998.11.02-1998.11.06

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2 国際会議録 Growth Technologies for 300mm Arsenic Heavily Doped Silicon Single Crystals H. Tu, Q. Zhou, G. Zhang, X. Dai, Z. Wu, T. Jia Electrochemical Society	8 国際会議録 Transient Simulation of Grown-in Defect Dynamics in Czochralski Crystal Growth of Silicon Mori,T., Wang,Z., Brown,R.A. Electrochemical Society, SPIE-The International Society for Optical Engineering
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4 国際会議録 Oxygen Precipitation Behaviour in 300 mm Polished Czochralski Silicon Wafers Ono, T., Rozgonyi, G.A., Au, C., Messina, T., Goodall, R.K., Huff, H.R. Electrochemical Society	10 国際会議録 TURBULENT MELT CONVECTION AND ITS IMPLICATION ON LARGE DIAMETER SILICON CZOCHRALSKI CRYSTAL GROWTH Seidl, A., Mueller, G., Dornberger, E., Tomzig, E., Reyer, B., von Ammon, W. Electrochemical Society
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6 国際会議録 Formation Behaviour of Grown-in Defects in Silicon During Czochralski Crystal Growth Saishoji, T., Nakamura, K., Nakajima, H., Yokoyama, T., Ishikawa, F., Tomioka, J. Electrochemical Society	12 国際会議録 ENHANCEMENT OF OXYGEN PRECIPITATION IN QUENCHED CZOCHRALSKI SILICON CRYSTALS Hara, A, Fukuda, T., Hirai, I., Ohsawa, A. Materials Research Society

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