The use of amorphous SiO and SiO2 to passivate AuGe based ohmic contact for GaAs ICs
- 著者名:
LaRoche, J.R. Ren, F. Lothian, J.R. Hong, J. Lambers, E. Pearton, S.J. - 掲載資料名:
- Compound semiconductor power transistors and : State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIX)
- シリーズ名:
- Electrochemical Society Proceedings Series
- シリーズ巻号:
- 98-12
- 発行年:
- 1998
- 開始ページ:
- 238
- 終了ページ:
- 244
- 出版情報:
- Pennington, N. J.: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566772228 [1566772222]
- 言語:
- 英語
- 請求記号:
- E23400/98-12
- 資料種別:
- 国際会議録
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6
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Novel in-situ ion bombardment process for a thermally stable (>800 C) plasma deposited dielectric
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