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Dual Salicide and Self-aligned Metal Gate Formation for Sub-0.25μm CMOS Technologies Using CMP

著者名:
掲載資料名:
Proceedings of the Second International Symposium on Chemical Mechanical Planariarization [sic] in Integrated Circuit Device Manufacturing
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
98-7
発行年:
1998
開始ページ:
19
終了ページ:
25
出版情報:
Pennington, N. J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566772013 [156677201X]
言語:
英語
請求記号:
E23400/98-7
資料種別:
国際会議録

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