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Thin Nitride Barrier Self-Aligned Contact (TNBSAC) Oxide Etching in a High Density Inductively Coupled Plasma Using C4F8/CH3F/Ar Chemistry

著者名:
Kim, J-H.
Ryu, J-O.
Kim, J-S.
Lee, B-C.
Kim, J-W.
Seol, Y-S.
さらに 1 件
掲載資料名:
Proceedings of the twelfth International Symposium on Plasma Processing
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
98-4
発行年:
1998
開始ページ:
137
終了ページ:
145
出版情報:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566771986 [1566771986]
言語:
英語
請求記号:
E23400/98-4
資料種別:
国際会議録

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