Blank Cover Image

Plasma Processing Induced Boron Deactivation in Silicon Substrates and Correlation with Plasma Charging Damage

著者名:
Brozek, T.  
掲載資料名:
Proceedings of the twelfth International Symposium on Plasma Processing
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
98-4
発行年:
1998
開始ページ:
22
終了ページ:
28
出版情報:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566771986 [1566771986]
言語:
英語
請求記号:
E23400/98-4
資料種別:
国際会議録

類似資料:

1 国際会議録 Localized Charge Injection-A Tool to Investigate Plasma Damage in CMOS Devices

Viswanathan,C.R., Rao,V.Ramgopal, Brozek,T.

Narosa Publishing House
7 国際会議録 Pair charge correlations in silicon nanostructures

Bagraev,N.T., Bouravleuv,A.D., Gasumyants,V.E., Gehihoff,W., Klyachkin,L.E., Malyarenko,A.M., Naeser,A.F.A., …

SPIE - The International Society for Optical Engineering
2 国際会議録 In-line testing of antenna-type test structures for separation of sources of process-induced damage

Brozek,T., Roberts,D., Dao,T.

SPIE-The International Society for Optical Engineering
8 国際会議録 METAL CONTAMINATION AND SILICON DAMAGE EFFECTS OF OXIDE PLASMA ETCH PROCESSES

Vincs, L., Fujishiro, F., Echtle, D., Garcia, A., Han, Y.-P., Loh, Y.T., Delgado, M., Parmantie, W.

Electrochemical Society
3 国際会議録 Sensitivity of polysilicon and polycide antenna MOS capacitor to ion implantation charging effects

Brozek,T., Norton,C.

SPIE-The International Society for Optical Engineering
9 国際会議録 ION-BEAM-INDUCED DAMAGING AND DYNAMIC ANNELAING PROCESSES IN SILICON

Short, K. T., Chivers, D. J., Elliman, R. G., Liu, J., Pogany, A. P., Wagenfeld, H. K., Williams, J. S.

North-Holland
4 国際会議録 Comparison of Automated Capacitor Testing Methods for Plasma Charging Induced Damage

Abdel-Ati, W.L.N., Ma, S., Yang, T.-C., McVittie, J.P., Saraswat, K.C.

Electrochemical Society
10 国際会議録 Generation of Hole Traps in Silicon Dioxide Under Fowler-Nordheim Stress

Brozek, T., Chan, Y. D., Viswanathan, C. R.

MRS - Materials Research Society
5 国際会議録 The Characterization on Process Induced Damage of Silicon Wafering Process - Mechanical Damage

Oh, H.S., Kim, J.R., Kim, T.H., Yu, J.J., Lee, H.L., Lee, J.H., Rice, D.

Electrochemical Society
11 国際会議録 Plasma Charging Damage Performance Assessment with Scaled-up Process from 200 mm to 300 mm Dielectric Etch Chambers

Ma, S., Bjorkman, C., Mays, B., Kropwenicki, T., Feng, T., Li, Q., Dadu, U., Chang, M., Shan, H.

Electrochemical Society
6 国際会議録 Plasma-induced charging damage in P+-Polysilicon PMOSFETs

Lu,I.M., Chen,Y.Y., Joshi,A.B., Kwong,D.L.

SPIE-The International Society for Optical Engineering
12 国際会議録 High-density plasma FSG charging damage

Ang,T.C., Tse,M.S., Loong,S.Y., Wong,Y.C., Loh,W.B.

SPIE-The International Society for Optical Engineering
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12