Electron Cyclotron Resonance Chemical Vapor Deposited Silicon Nitride for T-gate Passivation

Electron Cyclotron Resonance Chemical Vapor Deposited Silicon Nitride for T-gate Passivation

著者名:

Ren, F.

掲載資料名:

Proceedings of the Symposium on Light Emitting Devices for Optoelectronic Applications and the Twenty-Eighth State-of-the-Art Program on Compound Semiconductors

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

98-2

発行年:

1998

開始ページ:

513

終了ページ:

519

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771948 [1566771943]

言語:

英語

請求記号:

E23400/98-2

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013905
シリーズID:	PA00000028
会議名:	Symposium on Light Emitting Devices for Optoelectronic Applications ; Meeting of the Electrochemical Society
回次:	1998 ; 193rd
会議開催地:	San Diego, CA, USA
会議開催年:	1998.05.03-1998.05.08

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