GATE?CONTROLLED PN JUNCTION LEAKAGE CURRENT FOR WIDE RANGE OF PERIMETER-TO-AREA RATIOS-AN INCREASE IN THE LEAKAGE CURRENT CAUSED BY DEFECTS RELATED TO OXYGEN PRECIPITATION AND ITS TEMPERATURE DEPENDENCE -
- 著者名:
- 掲載資料名:
- Silicon materials science and technology : proceedings of the Eighth International Symposium on Silicon Materials Science and Technology
- シリーズ名:
- Electrochemical Society Proceedings Series
- シリーズ巻号:
- 98-1(2)
- 発行年:
- 1998
- 開始ページ:
- 1262
- 終了ページ:
- 1273
- 総ページ数:
- 12
- 出版情報:
- Pennington, NJ: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566771931 [1566771935]
- 言語:
- 英語
- 請求記号:
- E23400/98-1
- 資料種別:
- 国際会議録
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