EFFECT OF HEAVY BORON DOPING ON OXIDE PRECIPITATE GROWTH IN CZOCHRALSKI SILICON
- 著者名:
Ono, T. Asayama, E. Horie, H. Hourai, M. Sueoka, K. Tsuya, H. Rozgonyi, G.A. - 掲載資料名:
- Silicon materials science and technology : proceedings of the Eighth International Symposium on Silicon Materials Science and Technology
- シリーズ名:
- Electrochemical Society Proceedings Series
- シリーズ巻号:
- 98-1(2)
- 発行年:
- 1998
- 開始ページ:
- 1113
- 終了ページ:
- 1125
- 総ページ数:
- 13
- 出版情報:
- Pennington, NJ: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566771931 [1566771935]
- 言語:
- 英語
- 請求記号:
- E23400/98-1
- 資料種別:
- 国際会議録
類似資料:
Electrochemical Society |
SPIE - The International Society for Optical Engineering |
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9
国際会議録
COMPUTER SIMULATION FOR MORPHOLOGY, SIZE AND DENSITY OF OXIDE PRECIPITATES IN CZOCHRALSKI SILICON
Electrochemical Society |
Electrochemical Society |
10
国際会議録
COMPUTER SIMULATION FOR MORPHOLOGY, SIZE AND DENSITY OF OXIDE PRECIPITATES IN CZOCHRALSKI SILICON
Electrochemical Society |
Electrochemical Society | |
Electrochemical Society |