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CURRICULUM VITAE OF OXIDE PRECIPITATES: FROM NUCLEATION DURING CRYSTAL GROWTH TO THEIR FINAL DESTINATION IN PROCESSED WAFERS

著者名:
Kissinger, G.
Vanhellemont, J.
Lambert, U.
Dornberger, E.
Sorge, R.
Morgenstern, G.
Grabolla, T.
Graef, D.
von Ammon, W.
Wagner, P.
Richter, H.
さらに 6 件
掲載資料名:
Silicon materials science and technology : proceedings of the Eighth International Symposium on Silicon Materials Science and Technology
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
98-1(2)
発行年:
1998
開始ページ:
1095
終了ページ:
1112
総ページ数:
18
出版情報:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566771931 [1566771935]
言語:
英語
請求記号:
E23400/98-1
資料種別:
国際会議録

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1 国際会議録 Grown-in oxide precipitate nuclei in Czochralski silicon substrates and their role in device processing

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2 国際会議録 Oxygen Precipitation and Stacking Fault Formation in Wafers with a Transition from Vacancy-Rich to Interstitial-Rich

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3 国際会議録 D-defects and metal-related flow patterns

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4 国際会議録 The Impact of the Dwell Time Above 900℃ During Crystal Growth on the Gate Oxide Integrity of Silicon Wafers

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