THE INTERRELATION BETWEEN THE MORPHOLOGY OF THE OXYGEN PRECIPITATES AND THE JUNCTION LEAKAGE CURRENT IN CZOCHRALSKI SILICON CRYSTALS

THE INTERRELATION BETWEEN THE MORPHOLOGY OF THE OXYGEN PRECIPITATES AND THE JUNCTION LEAKAGE CURRENT IN CZOCHRALSKI SILICON CRYSTALS

著者名:

掲載資料名:

Silicon materials science and technology : proceedings of the Eighth International Symposium on Silicon Materials Science and Technology

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

98-1(2)

発行年:

1998

開始ページ:

1033

終了ページ:

1044

総ページ数:

12

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771931 [1566771935]

言語:

英語

請求記号:

E23400/98-1

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013904
シリーズID:	PA00000028
会議名:	International Symposium on Silicon Materials Science and Technology
回次:	8th
会議開催地:	San Diego, CA, USA
会議開催年:	1998.05.04-1998.05.08

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2 国際会議録 Dependence of the Morphology of Oxygen Precipitates Upon Oxygen Supersaturation in Cz Silicon Crystals Fujimori, H. Electrochemical Society	8 国際会議録 COMPUTER SIMULATION FOR MORPHOLOGY, SIZE AND DENSITY OF OXIDE PRECIPITATES IN CZOCHRALSKI SILICON Sueoka, K., Akatsuka, M., Okui, M., Katahama, H. Electrochemical Society
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6 国際会議録 YIELD STRESS OF CZOCHRALSKI SILICON- THE EFFECT OF IMPURITIES AND OXYGEN PRECIPITATE MORPHOLOGY Lawrence, J.D., Tsai, H.S. Materials Research Society	12 国際会議録 Effect of Bulk Microdefects Induced in Silicon by Heat Treatment on the Leakage Current of pn Junctions Murakami, Y., Satou, Y., Furuya, H., Abe, H., Shingyouji, T. Electrochemical Society

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