NVITED: POINT DEFECT BASED MODELING OF DOPANT DIFFUSION AND TRANSIENT ENHANCED DIFFUSION IN SILICON

NVITED: POINT DEFECT BASED MODELING OF DOPANT DIFFUSION AND TRANSIENT ENHANCED DIFFUSION IN SILICON

著者名:: Plummer, J.D.
掲載資料名:: Silicon materials science and technology : proceedings of the Eighth International Symposium on Silicon Materials Science and Technology
シリーズ名:: Electrochemical Society Proceedings Series
シリーズ巻号:: 98-1(2)
発行年:: 1998
開始ページ:: 899
終了ページ:: 913
総ページ数:: 15
出版情報:: Pennington, NJ: Electrochemical Society
ISSN:: 01616374
ISBN:: 9781566771931 [1566771935]
言語:: 英語
請求記号:: E23400/98-1
資料種別:: 国際会議録

詳細

TDL書誌ID:	ZA00013904
シリーズID:	PA00000028
会議名:	International Symposium on Silicon Materials Science and Technology
回次:	8th
会議開催地:	San Diego, CA, USA
会議開催年:	1998.05.04-1998.05.08

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1 国際会議録 Physical Modeling of Transient Enhanced Diffusion in Silicon Griffin, P.B., Plummer, J.D. Electrochemical Society	7 国際会議録 Process Simulation in Submicron Silicon Structures Plummer, J.D. Electrochemical Society
2 国際会議録 THE INFLUENCE OF POINT DEFECTS ON TWO DIMENSIONAL DIFFUSION KINETICS Griffin, P.B., Plummer, J.D. Materials Research Society	8 国際会議録 EVIDENCE FOR A KICKOUT MECHANISM FOR GERMANIUM DIFFUSION IN SILICON Perozziello, E.A., Griffin, P.B., Plummer, J.D. Electrochemical Society
3 国際会議録 OXIDATION ENHANCED DOPANT DIFFUSION IN THIN SOI FILMS Crowder, S.W., Griffin, P.B., Plummer, J.D. Electrochemical Society	9 国際会議録 A Comprehensive Model for Carbon Suppression of Boron Transient Enhanced Diffusion Ngau, Julie L., Griffin, Peter B., Plummer, James D. Materials Research Society
4 国際会議録 UNDERSTANDING AND CONTROLLING TRANSIENT ENHANCED DOPANT DIFFUSION IN SILICON Stolk, P. A., Gossmann, H.-J., Eaglesham, D. J., Jacobson, D. C., Luftman, H. S., Poate, J. M. MRS - Materials Research Society	10 国際会議録 Models and Parameters for the Coupled Diffusion of Dopants and Point Defects in Silicon Dunham, S.T., Wittel, F. Electrochemical Society
5 国際会議録 Silicon Oxidation Kinetics - From Deal-Grove to VLSI Process Models Plummer, J.D. Electrochemical Society	11 国際会議録 Dopant Diffusion and Point Defects ni Silicon During Silicidation Honeycutt W. J., Rozgonyi A. G. Kluwer Academic Publishers
6 国際会議録 Nitridation Enhanced Diffusion of Antimony in Bulk and Silicon-on-Insulator Material Crowder, S.W., Griffin, P.B., Plummer, J.D. Electrochemical Society	12 国際会議録 TRANSIENT ENHANCED DIFFUSION AND GETTERING OF DOPANTS IN ION IMPLANTED SILICON Pennycook, S. J., Narayan, J., Culbertson, R. J. Materials Research Society

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