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NVITED: POINT DEFECT BASED MODELING OF DOPANT DIFFUSION AND TRANSIENT ENHANCED DIFFUSION IN SILICON

著者名:
Plummer, J.D.  
掲載資料名:
Silicon materials science and technology : proceedings of the Eighth International Symposium on Silicon Materials Science and Technology
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
98-1(2)
発行年:
1998
開始ページ:
899
終了ページ:
913
総ページ数:
15
出版情報:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566771931 [1566771935]
言語:
英語
請求記号:
E23400/98-1
資料種別:
国際会議録

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