RADIAL DISTRIBUTION OF THERMALLY-INDUCED DEFECTS IN HEAVILY BORON-DOPED SILICON WAFERS

RADIAL DISTRIBUTION OF THERMALLY-INDUCED DEFECTS IN HEAVILY BORON-DOPED SILICON WAFERS

著者名:

Asayama, E.

掲載資料名:

Silicon materials science and technology : proceedings of the Eighth International Symposium on Silicon Materials Science and Technology

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

98-1(1)

発行年:

1998

開始ページ:

546

終了ページ:

556

総ページ数:

11

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771931 [1566771935]

言語:

英語

請求記号:

E23400/98-1

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013903
シリーズID:	PA00000028
会議名:	International Symposium on Silicon Materials Science and Technology
回次:	8th
会議開催地:	San Diego, CA, USA
会議開催年:	1998.05.04-1998.05.08

類似資料:

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2 国際会議録 Defects Behavior on p/p+ Epitaxial Wafers During Low Temperature Device Processing Hourai, M., Asayama, E., Onno, T., Sano, M., Tsuya, H. Electrochemical Society	8 国際会議録 Investigation of the Effect of Thermal History on Ring-OSF Formation in CZ-Silicon Crystals Kelly, G. P., Hourai, M., Umeno, S., Sano, M., Tsuya, H. MRS - Materials Research Society
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4 国際会議録 Effect of Heavy Boron Doping on Oxygen Precipitation in Czochralski Silicon Substrates of Epitaxial Wafers Sucoka, K., Yonemura, M., Akatsuka, M., Katahama, H., Ono, T., Asayama, E. Electrochemical Society	10 国際会議録 Measurement of Minority Carrier Lifetime in Epitaxial Silicon Layers Kitamura, T., Tamura, F., Hara, T., Hourai, M., Tsuya, H. Electrochemical Society
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