SIMULATION OF NON-UNIFORM GROWN-IN VOID DISTRIBUTIONS IN CZOCHRALSKI IN SILICON CRYSTAL

SIMULATION OF NON-UNIFORM GROWN-IN VOID DISTRIBUTIONS IN CZOCHRALSKI IN SILICON CRYSTAL

著者名:

Dornberger, E.

掲載資料名:

Silicon materials science and technology : proceedings of the Eighth International Symposium on Silicon Materials Science and Technology

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

98-1(1)

発行年:

1998

開始ページ:

490

終了ページ:

502

総ページ数:

13

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771931 [1566771935]

言語:

英語

請求記号:

E23400/98-1

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013903
シリーズID:	PA00000028
会議名:	International Symposium on Silicon Materials Science and Technology
回次:	8th
会議開催地:	San Diego, CA, USA
会議開催年:	1998.05.04-1998.05.08

類似資料:

1 国際会議録 Simulation of grown-in voids in Czochralski silicon crystals Dornberger, E., Esfandyari, J., Graef, D., Vanhellemont, J., Lambert, U., Dupret, F., von Ammon, W. Electrochemical Society	7 国際会議録 Defects in as-grown silicon and their evolution during beat treatments Vanhellemont,J., Doruberger,E., Esfandyari,J., Kissinger,G., Trauwaert,M.-A., Bender,H., Graf,D., Lambert,U., … Trans Tech Publications
2 国際会議録 Grown-in oxide precipitate nuclei in Czochralski silicon substrates and their role in device processing Kissinger, G., Grabolla, T., Morgenstern, G., Richter, H., Graef, D., Vanhellemont, J., Lambert, U., von Ammon, W. Electrochemical Society	8 国際会議録 Defects in silicon crystals and their impact on device characteristics Dornberger, E., Temmler, D., von Ammon, W. Electrochemical Society
3 国際会議録 Recent Progress in Understanding Oxygen Precipitation in Silicon Vanhellemont, J., Esfandyari, J., Obermeier, G., Dornberger, E., Graef, D., Lambert, U., Kissinger, G. Electrochemical Society	9 国際会議録 DEFECTS IN SILICON CRYSTALS AND THEIR IMPACT ON TRENCH CAPACITOR DRAM DEVICE CHARACTERISTICS Dornberger, E., Temmler, D., von Ammon, W. Electrochemical Society
4 国際会議録 The Impact of the Dwell Time Above 900℃ During Crystal Growth on the Gate Oxide Integrity of Silicon Wafers Dornberger, E., von Ammon, W., Graef, D., Lambert, U., Miller, A., Oelkrug, H., Ehlert, A. Electrochemical Society	10 国際会議録 DEFECTS IN SILICON CRYSTALS AND THEIR IMPACT ON TRENCH CAPACITOR DRAM DEVICE CHARACTERISTICS Dornberger, E., Temmler, D., von Ammon, W. Electrochemical Society
5 国際会議録 Determination of Intrinsic Point Defect Properties in Silicon by Analyzing OSF-Ring Dynamics and Void Formation Dornberger, E., Sinno, T., Esfandyari, J., Vanhellemont, J., Brown, R.A., von Ammon, W. Electrochemical Society	11 国際会議録 GATE OXIDE RELATED BULK PROPERTIES OF OXYGEN DOPED FLOATING ZONE AND CZOCHRALSKI SILICON Ammon, W.v., Ehlert, A., Lambert, U., Graef, D., Brohl, M., Wagner, P. Electrochemical Society
6 国際会議録 CURRICULUM VITAE OF OXIDE PRECIPITATES: FROM NUCLEATION DURING CRYSTAL GROWTH TO THEIR FINAL DESTINATION IN PROCESSED WAFERS Kissinger, G., Vanhellemont, J., Lambert, U., Dornberger, E., Sorge, R., Morgenstern, G., Grabolla, T., Graef, D., von … Electrochemical Society	12 国際会議録 D-defects and metal-related flow patterns Kissinger, G., Morgenstern, G., Richter, H., Vanhellemont, J., Graef, D., Lambert, U., von Ammon, W., Wagner, P. Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12