Properties of GaN Thin Films Prepared by Laser Induced Molecular Beam Epitaxy

Properties of GaN Thin Films Prepared by Laser Induced Molecular Beam Epitaxy

著者名:

掲載資料名:

Proceedings of the Second Symposium on III-V Nitride Materials and Processes

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

97-34

発行年:

1997

開始ページ:

236

終了ページ:

243

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771870 [1566771870]

言語:

英語

請求記号:

E23400/97-34

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013896
シリーズID:	PA00000028
会議名:	Symposium on III-V Nitride Materials and Processes
回次:	2nd
会議開催地:	Paris, France
会議開催年:	1997.08.31-1997.09.05

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