The Influence of GaN Buffer Layer Stoichiometry on Properties of GaN Epilayer
- 著者名:
Usikov, A.S. Lundin, W.V. Ushakov, U.I. Pushayi, B.V. Schmidt, N.M. Ber, B.Ya. Kudryavzev, Yu.N. Davidson, V.Yu. - 掲載資料名:
- Proceedings of the Second Symposium on III-V Nitride Materials and Processes
- シリーズ名:
- Electrochemical Society Proceedings Series
- シリーズ巻号:
- 97-34
- 発行年:
- 1997
- 開始ページ:
- 118
- 終了ページ:
- 124
- 出版情報:
- Pennington, NJ: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566771870 [1566771870]
- 言語:
- 英語
- 請求記号:
- E23400/97-34
- 資料種別:
- 国際会議録
類似資料:
Trans Tech Publications |
SPIE-The International Society for Optical Engineering |
2
国際会議録
Some Features of a Nucleation Layer Growth Process and its Influence on the CaN Epilayer Quality
Trans Tech Publications |
Trans Tech Publications |
Electrochemical Society |
Trans Tech Publications |
Electrochemical Society |
10
国際会議録
Raman studies as a tool for characterization of the strained hexagonal GaN/AlxGa1-xN superlattices
SPIE-The International Society for Optical Engineering |
Trans Tech Publications |
Trans Tech Publications |
Electrochemical Society |
Trans Tech Publications |