Low Temperature Thin Oxide Film Formation by Microwave Excitation High Density Plasma Direct Oxidation
- 著者名:
- 掲載資料名:
- Proceedings of the International Symposium on Thin Film Materials, Processes, Reliability, and Applications, Thin Film Processes
- シリーズ名:
- Electrochemical Society Proceedings Series
- シリーズ巻号:
- 97-30
- 発行年:
- 1997
- 開始ページ:
- 223
- 終了ページ:
- 230
- 出版情報:
- Pennington, NJ: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566771832 [1566771838]
- 言語:
- 英語
- 請求記号:
- E23400/97-30
- 資料種別:
- 国際会議録
類似資料:
1
国際会議録
Low-Temperature Formation of Gate-Grade Silicon Oxide Films Using High-Density Krypton Plasma
Electrochemical Society |
Electrochemical Society |
MRS - Materials Research Society |
Electrochemical Society |
Electrochemical Society |
Electrochemical Society |
Electrochemical Society |
MRS - Materials Research Society |
5
国際会議録
Ultra-Low Temperature Growth of High-Integrity Gate Oxide Films by Low-Energy Ion-Assisted Oxidation
Electrochemical Society |
Materials Research Society |
Electrochemical Society |
IMAPS, SPIE-The International Society for Optical |