High Density Plasma Gate Etching of 0.12 um Devices with Sub-1.5 nm Gate Oxides | 東京工業大学附属図書館文献データベース

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High Density Plasma Gate Etching of 0.12 um Devices with Sub-1.5 nm Gate Oxides

著者名:

さらに 6 件

掲載資料名:

Proceedings of the International Symposium on Thin Film Materials, Processes, Reliability, and Applications, Thin Film Processes

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

97-30

発行年:

1997

開始ページ:

85

終了ページ:

95

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771832 [1566771838]

言語:

英語

請求記号:

E23400/97-30

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013892
シリーズID:	PA00000028
会議名:	International Symposium on Thin Film Materials, Processes, Reliability, and Applications, Thin Film Processes ; Joint International Meeting of the Electrochemical Society
回次:	1997 ; 1997
会議開催地:	Paris, France
会議開催年:	1997.08.31-1997.09.05

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