Consideration of the semiconductor thickness effect on the electron effective mobility in the GAA SOI transistor

Consideration of the semiconductor thickness effect on the electron effective mobility in the GAA SOI transistor

著者名:

掲載資料名:

Proceedings of the Eighth International Symposium on Silicon-on-Insulator Technology and Devices

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

97-23

発行年:

1997

開始ページ:

301

終了ページ:

306

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771764 [1566771765]

言語:

英語

請求記号:

E23400/97-23

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013885
シリーズID:	PA00000028
会議名:	International Symposium on Silicon-on-Insulator Technology and Devices ; Meeting of the Electrochemical Society ; Annual Meeting of the International Society of Electrochemistry
回次:	8th ; 192nd ; 48th
会議開催地:	Paris, France
会議開催年:	1997.08.31-1997.09.05

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