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A new method for determination of the fixed charge density at the buried oxide/underlying substrate interface in SOI MOSFETs

著者名:
掲載資料名:
Proceedings of the Eighth International Symposium on Silicon-on-Insulator Technology and Devices
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
97-23
発行年:
1997
開始ページ:
162
終了ページ:
167
出版情報:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566771764 [1566771765]
言語:
英語
請求記号:
E23400/97-23
資料種別:
国際会議録

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