Impact of silicon substrate oxygen precipitation fine tuning on high density memories retention time

Impact of silicon substrate oxygen precipitation fine tuning on high density memories retention time

著者名:

Borionetti, G.

掲載資料名:

Proceedings of the Symposium on Crystalline Defects and Contamination, their Impact and Control in Device Manufacturing II

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

97-22

発行年:

1997

開始ページ:

196

終了ページ:

203

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771757 [1566771757]

言語:

英語

請求記号:

E23400/97-22

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013884
シリーズID:	PA00000028
会議名:	Symposium on Crystalline Defects and Contamination ; Symposium on Silicon Cleaning Technology ; Meeting of the Electrochemical Society ; Annual Meeting of the International Society of Electrochemistry
回次:	2nd ; 1997 ; 192nd ; 48th
会議開催地:	Paris, France
会議開催年:	1997.08.31-1997.09.02

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