Crystal originated particles (COPs), bulk defects including the OSF ring, gate oxide integrity (GOI), and DRAM yield

Crystal originated particles (COPs), bulk defects including the OSF ring, gate oxide integrity (GOI), and DRAM yield

著者名:

掲載資料名:

Proceedings of the Symposium on Crystalline Defects and Contamination, their Impact and Control in Device Manufacturing II

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

97-22

発行年:

1997

開始ページ:

153

終了ページ:

172

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771757 [1566771757]

言語:

英語

請求記号:

E23400/97-22

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013884
シリーズID:	PA00000028
会議名:	Symposium on Crystalline Defects and Contamination ; Symposium on Silicon Cleaning Technology ; Meeting of the Electrochemical Society ; Annual Meeting of the International Society of Electrochemistry
回次:	2nd ; 1997 ; 192nd ; 48th
会議開催地:	Paris, France
会議開催年:	1997.08.31-1997.09.02

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2 国際会議録 Effect of Crystal Defects Such as COPs, Large Dislocations, and OSF Ring on Device Integrity Degradation Park, J.G., Lee, G.S., Park, J.M., Chon, S.M., Chung, H.K. Electrochemical Society	8 国際会議録 Impact of Heavy Boron and Antimony Doping on COPs and GOI Ono, T., Hone, H., Miyazaki, M., Tsuya, H., Rozgonyi, G.A. Electrochemical Society
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