Proton irradiation induced lattice defects in Si diodes and their effects on device performance
- 著者名:
Ohyama, H. Simoen, E. Claeys, C. Vanhellemont, J. Takami, Y. Hayama, T. Sunaga, H. Kobayashi, K. - 掲載資料名:
- Proceedings of the Symposium on Crystalline Defects and Contamination, their Impact and Control in Device Manufacturing II
- シリーズ名:
- Electrochemical Society Proceedings Series
- シリーズ巻号:
- 97-22
- 発行年:
- 1997
- 開始ページ:
- 143
- 終了ページ:
- 152
- 出版情報:
- Pennington, NJ: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566771757 [1566771757]
- 言語:
- 英語
- 請求記号:
- E23400/97-22
- 資料種別:
- 国際会議録
類似資料:
Trans Tech Publications |
MRS - Materials Research Society |
Trans Tech Publications |
8
国際会議録
Radiation Damage in Si Avalanche Photodiodes by 1-MeV Fast Neutrons and 220-MeV Carbon Particles
MRS - Materials Research Society |
Trans Tech Publications |
Electrochemical Society |
4
国際会議録
Impact of the Ge Content on the Radiation Hardness of Heterojunction Diodes in SiGe Strained Layers
MRS - Materials Research Society |
10
国際会議録
Influence Of Mechanical Stress On The Electrical Performance Of Polycrystalline-Silicon Resistors
Materials Research Society |
MRS - Materials Research Society |
MRS - Materials Research Society |
Electrochemical Society |
Electrochemical Society |