Grown-in oxide precipitate nuclei in Czochralski silicon substrates and their role in device processing

Grown-in oxide precipitate nuclei in Czochralski silicon substrates and their role in device processing

著者名:

Kissinger, G.

掲載資料名:

Proceedings of the Symposium on Crystalline Defects and Contamination, their Impact and Control in Device Manufacturing II

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

97-22

発行年:

1997

開始ページ:

74

終了ページ:

87

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771757 [1566771757]

言語:

英語

請求記号:

E23400/97-22

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013884
シリーズID:	PA00000028
会議名:	Symposium on Crystalline Defects and Contamination ; Symposium on Silicon Cleaning Technology ; Meeting of the Electrochemical Society ; Annual Meeting of the International Society of Electrochemistry
回次:	2nd ; 1997 ; 192nd ; 48th
会議開催地:	Paris, France
会議開催年:	1997.08.31-1997.09.02

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2 国際会議録 Oxygen Precipitation and Stacking Fault Formation in Wafers with a Transition from Vacancy-Rich to Interstitial-Rich Kissinger, G., Morgenstern, G., Grabolla, T., Richter, H., Vanhellemont, J., Lambert, U., Graef, D. Electrochemical Society	8 国際会議録 Defects in as-grown silicon and their evolution during beat treatments Vanhellemont,J., Doruberger,E., Esfandyari,J., Kissinger,G., Trauwaert,M.-A., Bender,H., Graf,D., Lambert,U., … Trans Tech Publications
3 国際会議録 D-defects and metal-related flow patterns Kissinger, G., Morgenstern, G., Richter, H., Vanhellemont, J., Graef, D., Lambert, U., von Ammon, W., Wagner, P. Electrochemical Society	9 国際会議録 Influence of Boron Doping on Oxide Precipitate Nucleation and Gettering of Iron Impurities in Low Thermal Budget Processing of Czochralski Silicon Kissinger, G., Vanhellemont, J., Morgenstern, G., Blietz, M., Tittelbach-Helmrich, K., Obermejer, G., Wahlich, R. Electrochemical Society
4 国際会議録 Verification of a Method to Detect Grown-in Oxide Precipitate Nuclei in Czochralski Silicon G. Kissinger, A. Sattler, J. Dabrowski, W. Von Ammon Electrochemical Society	10 国際会議録 On the Nature of Grown-In Defects in Silicon: Dependence on Pulling Conditions and Evolution During Thermal Treatments Vanhellemont, J., Kissinger, G., Senkader, S., Graef, D., Kenis, K., Depas, M., Lambert, U., Wagner, P. Electrochemical Society
5 国際会議録 Simulation of grown-in voids in Czochralski silicon crystals Dornberger, E., Esfandyari, J., Graef, D., Vanhellemont, J., Lambert, U., Dupret, F., von Ammon, W. Electrochemical Society	11 国際会議録 Analysis of the Nucleation Kinetics of Oxide Precipitates in Czochralski Silicon G. Kissinger, D. Kot, J. Dabrowski, V. Akhmetov, A. Sattler Electrochemical Society
6 国際会議録 Investigation of crystal defects in as-grown and processed silicon wafers and heteroepitaxial layers by infrared light scattering tomography Kissinger, G., Vanhellemont, J., Graef, D., Zulehner, W., Claeys, C., Richter, H. Electrochemical Society	12 国際会議録 Recent Progress in Understanding Oxygen Precipitation in Silicon Vanhellemont, J., Esfandyari, J., Obermeier, G., Dornberger, E., Graef, D., Lambert, U., Kissinger, G. Electrochemical Society

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