High-temperature annealed silicon wafers

High-temperature annealed silicon wafers

著者名:

Graef, D.

掲載資料名:

Proceedings of the Symposium on Crystalline Defects and Contamination, their Impact and Control in Device Manufacturing II

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

97-22

発行年:

1997

開始ページ:

18

終了ページ:

31

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771757 [1566771757]

言語:

英語

請求記号:

E23400/97-22

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013884
シリーズID:	PA00000028
会議名:	Symposium on Crystalline Defects and Contamination ; Symposium on Silicon Cleaning Technology ; Meeting of the Electrochemical Society ; Annual Meeting of the International Society of Electrochemistry
回次:	2nd ; 1997 ; 192nd ; 48th
会議開催地:	Paris, France
会議開催年:	1997.08.31-1997.09.02

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2 国際会議録 Crystal Defects in Highly Boron Doped Silicon Suhren, M., Graef, D., Lambert, U., Wagner, P. Electrochemical Society	8 国際会議録 The Impact of the Dwell Time Above 900℃ During Crystal Growth on the Gate Oxide Integrity of Silicon Wafers Dornberger, E., von Ammon, W., Graef, D., Lambert, U., Miller, A., Oelkrug, H., Ehlert, A. Electrochemical Society
3 国際会議録 CURRICULUM VITAE OF OXIDE PRECIPITATES: FROM NUCLEATION DURING CRYSTAL GROWTH TO THEIR FINAL DESTINATION IN PROCESSED WAFERS Kissinger, G., Vanhellemont, J., Lambert, U., Dornberger, E., Sorge, R., Morgenstern, G., Grabolla, T., Graef, D., von … Electrochemical Society	9 国際会議録 Reliability of Gate Oxides on Silicon Substrates with 5-10 nm Oxide Thickness Huber, A., Grabmeler, J., Lambert, U., Wahlich, R. Electrochemical Society
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5 国際会議録 GATE OXIDE RELATED BULK PROPERTIES OF OXYGEN DOPED FLOATING ZONE AND CZOCHRALSKI SILICON Ammon, W.v., Ehlert, A., Lambert, U., Graef, D., Brohl, M., Wagner, P. Electrochemical Society	11 国際会議録 ARGON-ANNEALED 300mm WAFERS COMPLEMENTING PP- EPITAXIAL LAYERS Muller, T., Siebert, W., Messmann, K., Wablich, R., Krottenthaler, P., Hoelzl, R., Ikari, A., von Ammon, W. Electrochemical Society
6 国際会議録 On the Nature of Grown-In Defects in Silicon: Dependence on Pulling Conditions and Evolution During Thermal Treatments Vanhellemont, J., Kissinger, G., Senkader, S., Graef, D., Kenis, K., Depas, M., Lambert, U., Wagner, P. Electrochemical Society	12 国際会議録 ARGON-ANNEALED 300mm WAFERS COMPLEMENTING PP- EPITAXIAL LAYERS Muller, T., Siebert, W., Messmann, K., Wablich, R., Krottenthaler, P., Hoelzl, R., Ikari, A., von Ammon, W. Electrochemical Society

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