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Bias Dependence of the Transmission Coefficient of Holes Through the Abrupt Emitter-Base Junction of a In0.52Al0.48As/In0.53Ga0.47As Pnp Heterojunction Bipolar Transistor

著者名:
掲載資料名:
Proceedings of the Fourth International Symposium on Quantum Confinement : nanoscale materials, devices, and systems
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
97-11
発行年:
1997
開始ページ:
444
終了ページ:
461
総ページ数:
18
出版情報:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566771382 [1566771382]
言語:
英語
請求記号:
E23400/97-11
資料種別:
国際会議録

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