A 0.18 μm CMOS Technology for Elevated Source/Drain MOSFETs Using Selective Silicon Epitaxy | 東京工業大学附属図書館文献データベース

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A 0.18 μm CMOS Technology for Elevated Source/Drain MOSFETs Using Selective Silicon Epitaxy

著者名:

Bartholomew, R.

さらに 6 件

掲載資料名:

ULSI science and technology, 1997 : proceedings of the Sixth International Symposium on Ultralarge Scale Integration Science and Technology

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

97-3

発行年:

1997

開始ページ:

571

終了ページ:

586

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771306 [1566771307]

言語:

英語

請求記号:

E23400/970512

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013864
シリーズID:	PA00000028
会議名:	International Symposium on Ultralarge Scale Integration Science and Technology
回次:	6th
会議開催地:	Montreal, Quebec, Canada
会議開催年:	1997.05.05-1997.05.09

類似資料:

1 国際会議録 Parasitic Resistance Considerations of Using Elevated Source/Drain for Sub-0.25 μm MOSFET Technology Sun, J., Srivastava, A., Bartholomew, R.F., Bellur, K., Osburn, C.M., Masnari, N.A. Electrochemical Society	7 国際会議録 Selective Epitaxial Si and SiGe for Elevated Source Drain MOSFETs Taylor, W.J, Tobin, P.J Electrochemical Society
2 国際会議録 Sub-Half Micron Elevated Source/Drain NMOSFETS by Low Temperature Selective Epitaxial Deposition Sun, J., Bartholomew, R. F., Bellur, K., O'Neil, P. A., Srivastava, A., Violette, K. E., Ozturk, M. C., Osburn, C. M., … MRS - Materials Research Society	8 国際会議録 Shallow source/drain extension formation using antimony and indium pre-amorphization schemes for 0.18- to 0.13-ｦﾌm CMOS technologies Hu,J.C., Rodder,M., Chen,I.-C. SPIE-The International Society for Optical Engineering
3 国際会議録 Drain Engineering of Sub-Quarter-μm MOSFET Devices Tsai, J.-Y., Osburn, C.M. Electrochemical Society	9 国際会議録 Selective Silicon-Germanium Source/Drain Technology For Nanoscale CMOS Ozturk, M.C., Pesovic, N., Liu, J., Mo, H., Kang, I., Gannavaram, S. Materials Research Society
4 国際会議録 Use of elevated source/drain structure in sub-0.1-ｦﾌm NMOSFETs Sun,J.J., Tsai,J.-Y., Yee,K.F., Osburn,C.M. SPIE-The International Society for Optical Engineering	10 国際会議録 An ultrafast Geiger-mode single-photon avalanche diode in 0.18-μm CMOS technology [6372-40] Finkelstein, H., Hsu, M. J., Esener, S. SPIE - The International Society of Optical Engineering
5 国際会議録 Pre-Deposition Treatments for Selective Rapid Thermal Chemical Vapor Deposition of TiSi2 on Arsenic-Implanted Silicon Substrates Fang, H., Oeztuerk, M.C., O'Neil, P.A., Seebaner, E. Electrochemical Society	11 国際会議録 Evaluation of 2.0nm Grown and Deposited Dielectrics in 0.1ｦﾌm PMOSFETs Srivastava, A., Heinisch, H. H., Vogel, E., Parker, C., Osburn, C. M., Masnari, N. A., Wortman, J. J., Hauser, J. R. MRS - Materials Research Society
6 国際会議録 Response-surface-based optimization of 0.1-ｦﾌm PMOSFETs with ultrathin gate stack dielectrics Srivastava,A., Osburn,C.M. SPIE-The International Society for Optical Engineering	12 国際会議録 3.2-Gb/s VCSEL driver implemented in 0.18-μm CMOS Chuah, A.E.L., Venditti, M.B., Liu, F., Plant, D.V. SPIE-The International Society for Optical Engineering

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