In-Sity Boron-Doped Si1-xGex Gate Technology for Submicron NMOS- and PMOS-FETs
- 著者名:
- 掲載資料名:
- ULSI science and technology, 1997 : proceedings of the Sixth International Symposium on Ultralarge Scale Integration Science and Technology
- シリーズ名:
- Electrochemical Society Proceedings Series
- シリーズ巻号:
- 97-3
- 発行年:
- 1997
- 開始ページ:
- 549
- 終了ページ:
- 560
- 出版情報:
- Pennington, NJ: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566771306 [1566771307]
- 言語:
- 英語
- 請求記号:
- E23400/970512
- 資料種別:
- 国際会議録
類似資料:
Electrochemical Society |
MRS - Materials Research Society |
Electrochemical Society |
Materials Research Society |
SPIE-The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |
Materials Research Society |
10
国際会議録
Electrical Stability Impact of Gate Oxide in Channel Implanted SiC NMOS and PMOS Transistors
Trans Tech Publications |
MRS - Materials Research Society |
Kluwer Academic Publishers |
6
国際会議録
DC and rf characteristics of submicron gate FETs formed by micromachined V-groove technology
SPIE - The International Society for Optical Engineering |
MRS - Materials Research Society |