Highly Reliable Raised Source/Drain Formation Process by Selective Si Deposition for 50 nm Junction-Depth MOSFETs
- 著者名:
- 掲載資料名:
- ULSI science and technology, 1997 : proceedings of the Sixth International Symposium on Ultralarge Scale Integration Science and Technology
- シリーズ名:
- Electrochemical Society Proceedings Series
- シリーズ巻号:
- 97-3
- 発行年:
- 1997
- 開始ページ:
- 335
- 終了ページ:
- 346
- 出版情報:
- Pennington, NJ: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566771306 [1566771307]
- 言語:
- 英語
- 請求記号:
- E23400/970512
- 資料種別:
- 国際会議録
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