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Highly Reliable Raised Source/Drain Formation Process by Selective Si Deposition for 50 nm Junction-Depth MOSFETs

著者名:
掲載資料名:
ULSI science and technology, 1997 : proceedings of the Sixth International Symposium on Ultralarge Scale Integration Science and Technology
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
97-3
発行年:
1997
開始ページ:
335
終了ページ:
346
出版情報:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566771306 [1566771307]
言語:
英語
請求記号:
E23400/970512
資料種別:
国際会議録

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