Operation of Silicon-Germanium CMOS on Sapphire Technology at Cryogenic Temperatures

Operation of Silicon-Germanium CMOS on Sapphire Technology at Cryogenic Temperatures

著者名:

Mathew, S.J.

掲載資料名:

Proceedings of the fourth Symposium on Low Temperature Electronics and High Temperature Superconductivity

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

97-2

発行年:

1997

開始ページ:

270

終了ページ:

278

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771290 [1566771293]

言語:

英語

請求記号:

E23400/970511

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013863
シリーズID:	PA00000028
会議名:	Symposium on Low Temperature Electronics and High Temperature Superconductivity ; Meeting of the Electrochemical Society
回次:	4th ; 191st
会議開催地:	Montreal, Canada
会議開催年:	1997.05.04-1997.05.11

類似資料:

1 国際会議録 Critical issues in SiGe on thin film silicon on sapphire for high performance room temperature CMOS technology Dubbelday, W B, On, J, Lagnado, I, Kavanagh, K, Walker, H, Chu, J, Meyerson, B Electrochemical Society	7 国際会議録 Status and Trends in the Cryogenic Operation of SiGe Bipolar Technology Cressler, J.D. Electrochemical Society
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6 国際会議録 INVITED: SILICON-GERMANIUM PROCESS TECHNOLOGY Subbanna, S., Ahlgren, D., Harame, D., Meyerson, B.S. Electrochemical Society	12 テクニカルペーパー Silicon-Germanium (SiGe) Technology for Distributed Architecture in Extreme Temperature Environments L. Peltz, J. Cressler, R. Frampton American Institute of Aeronautics and Astronautics

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