High Quality Thin Gate Dielectric Using ECR N2O-Plasma for Future Poly-Si TFT Applications

High Quality Thin Gate Dielectric Using ECR N2O-Plasma for Future Poly-Si TFT Applications

著者名:

掲載資料名:

Proceedings of the Third Symposium on Thin Film Transistor Technologies

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

96-23

発行年:

1996

開始ページ:

79

終了ページ:

88

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771733 [1566771730]

言語:

英語

請求記号:

E23400/970103

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013856
シリーズID:	PA00000028
会議名:	Symposium on Thin Film Transistor Technologies - TFTT
回次:	3rd
会議開催地:	San Antonio, Texas, USA
会議開催年:	1996.10.07-1996.10.11

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