The Role of AlN Encapsulation of GaN During Implant Activation Annealing

The Role of AlN Encapsulation of GaN During Implant Activation Annealing

著者名:

Zolper, J.C.

掲載資料名:

Proceedings of the Symposium on High Speed III-V Electronics for Wireless Applications and the twenty-fifth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXV)

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

96-15

発行年:

1996

開始ページ:

244

終了ページ:

248

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771658 [156677165X]

言語:

英語

請求記号:

E23400/963435

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013848
シリーズID:	PA00000028
会議名:	Symposium on High Speed III-V Electronics for Wireless Applications ; State-of-the-Art Program on Compound Semiconductors - SOTAPOCS ; Meeting of the Electrochemical Society
回次:	1996 ; 25th ; 190th
会議開催地:	San Antonio, Texas, USA
会議開催年:	1996.10.06-1996.10.11

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