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Effect of Al or Poly-Si Gate Electrodes and Oxide Thickness on Gate Oxide Integrity and Leakage Site Observations

著者名:
掲載資料名:
Proceedings of the Fourth International Symposium on High Purity Silicon
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
96-13
発行年:
1996
開始ページ:
345
終了ページ:
356
出版情報:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566771566 [1566771560]
言語:
英語
請求記号:
E23400/963433
資料種別:
国際会議録

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