Effect of Al or Poly-Si Gate Electrodes and Oxide Thickness on Gate Oxide Integrity and Leakage Site Observations
- 著者名:
- 掲載資料名:
- Proceedings of the Fourth International Symposium on High Purity Silicon
- シリーズ名:
- Electrochemical Society Proceedings Series
- シリーズ巻号:
- 96-13
- 発行年:
- 1996
- 開始ページ:
- 345
- 終了ページ:
- 356
- 出版情報:
- Pennington, NJ: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566771566 [1566771560]
- 言語:
- 英語
- 請求記号:
- E23400/963433
- 資料種別:
- 国際会議録
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