Interstitial Oxygen Concentration Role in the DW-LOCOS CMOS Technology

Interstitial Oxygen Concentration Role in the DW-LOCOS CMOS Technology

著者名:

Bellutti, P.

掲載資料名:

Proceedings of the Fourth International Symposium on High Purity Silicon

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

96-13

発行年:

1996

開始ページ:

338

終了ページ:

344

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771566 [1566771560]

言語:

英語

請求記号:

E23400/963433

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013846
シリーズID:	PA00000028
会議名:	International Symposium on High Purity Silicon ; Meeting of the Elecrochemical Society
回次:	4th ; 190h
会議開催地:	San Antonio, Texas, USA
会議開催年:	1996.10.06-1996.10.11

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