The Impact of the Dwell Time Above 900℃ During Crystal Growth on the Gate Oxide Integrity of Silicon Wafers

The Impact of the Dwell Time Above 900℃ During Crystal Growth on the Gate Oxide Integrity of Silicon Wafers

著者名:

Dornberger, E.

掲載資料名:

Proceedings of the Fourth International Symposium on High Purity Silicon

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

96-13

発行年:

1996

開始ページ:

140

終了ページ:

150

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771566 [1566771560]

言語:

英語

請求記号:

E23400/963433

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013846
シリーズID:	PA00000028
会議名:	International Symposium on High Purity Silicon ; Meeting of the Elecrochemical Society
回次:	4th ; 190h
会議開催地:	San Antonio, Texas, USA
会議開催年:	1996.10.06-1996.10.11

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4 国際会議録 Simulation of grown-in voids in Czochralski silicon crystals Dornberger, E., Esfandyari, J., Graef, D., Vanhellemont, J., Lambert, U., Dupret, F., von Ammon, W. Electrochemical Society	10 国際会議録 Advanced Silicon Wafers for 0.18 μm Design Rule and Beyond: Epi and fFLASH!* Schmolke, R., Blietz, M., Schauer, R., Zemke, D., Oelkrug, H., Ammon, W.v., Lambert, U., Grtlf, D. Electrochemical Society
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