Controlled Nitrogen Incorporation at Si-SiO2 Interfaces by Re- mote Plasma Assisted Processing

Controlled Nitrogen Incorporation at Si-SiO2 Interfaces by Re- mote Plasma Assisted Processing

著者名:

掲載資料名:

Proceedings of the eleventh International Symposium on Plasma Processing

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

96-12

発行年:

1996

開始ページ:

631

終了ページ:

638

総ページ数:

8

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771641 [1566771641]

言語:

英語

請求記号:

E23400/962354

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013845
シリーズID:	PA00000028
会議名:	International Symposium on Plasma Processing ; Meeting of the Electrochemical Society
回次:	11th ; 189th
会議開催地:	Los Angels, CA, USA
会議開催年:	1996.05.05-1996.05.10

類似資料:

1 国際会議録 Reaction Pathways for Nitrogen Incorporation at Si-SiO2 Interfaces Koh, K., Niimi, H., Lucovsky, G. MRS - Materials Research Society	7 国際会議録 Nitrogen-atom bonding at SiO2/Si interfaces in Metal-Insulator-Semiconductor (MIS) stacked gates made by integration of plasma assisted oxidation-deposition and … Ma, Y., Yasuda, T., Lucovsky, G. MRS - Materials Research Society
2 国際会議録 Controlled Incorporation of Nitrogen at the Top Surface of Silicon Oxide Gate Dielectrics Niimi, H., Koh, K., Lucovsky, G. MRS - Materials Research Society	8 国際会議録 Chemical Bonding and Si-SiO2 Interface Reliability: (A) Minimization of Suboxide Transition Regions, and (B) Monolayer Incorporation of Nitrogen Lucovsky, G. MRS - Materials Research Society
3 国際会議録 Differences between Interfacial Bonding Chemistry at SiC-SiO2 Interfaces Prepared by Low-Temperature Remote Plasma-Assisted Oxidation and High Temperature … Lucovsky,G., Niimi,H. Trans Tech Publications	9 国際会議録 Controlled Nitrogen-Atom Incorporation at Si-SiO2 Interfaces in MIS Devices Lee, David R., Parker, Christopher G., Hauser, John R., Lucovsky, Gerald MRS - Materials Research Society
4 国際会議録 Preparation of Ultrathin Oxide Films by Low-Temperature Remote Plasma-Assisted Process Niimi, H., Koh, K., Lucovsky, G. Electrochemical Society	10 国際会議録 CONTROL OF Si-SiO2 INTERFACE PROPERTIES IN MOS DEVICES PREPARED BY PLASMA-ASSISTED AND RAPID THERMAL PROCESSES Lucovsky, G., Yasuda, T., Ma, Y., Hattangady, S. V., Xu, X-L., Misra, V., Hornung, B., Wortman, J. J. MRS - Materials Research Society
5 国際会議録 Nitrogen at Si-SiO2 Interfaces: Chemical Bonding and Electrical Performance Lucovsky, G., Niimi, H., Koh, K., Lee, D.R., Jing, Z. Electrochemical Society	11 国際会議録 Electrical Performance of Stacked High-ti Gate Dielectrics: Remote Plasma CVD Ta2O5 and (Ta2O5)x(SiO2)1-x Alloys with Ultrathin Plasma Processed Si02 Interface … Niimi, H., Johnson, R.S., Lucovsky, C., Massoud, H.Z. Electrochemical Society
6 国際会議録 Cathodoluminescence Studies of Si-SiO2 Interfaces Prepared by Plasma-Assisted Oxidation and Subjected to Post-Oxidation Rapid Thermal Annealing Schafer, J., Young, A. P., Brillson, L. J., Niimi, H., Lucovsky, G. MRS - Materials Research Society	12 国際会議録 Integrated Processing of Silicon Oxynitride Alloy Dielectrics by Plasma-Assisted Oxidation, Chemical Vapor Deposition, and On-Line Rapid Thermal Annealing Hattangady, S. V., Niimi, H., Gandhi, S., Lucovsky, G. MRS - Materials Research Society

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