ECR, ICP and RIE plasma etching of GaN | 東京工業大学附属図書館文献データベース

Blank Cover Image

ECR, ICP and RIE plasma etching of GaN

著者名:

McClellan, G.B.

Abernathy, C.R.

Constantine, C.

Karlicek, R.F., Jr.

さらに 7 件

掲載資料名:

Proceedings of the First Symposium on III-V Nitride Materials and Processes

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

96-11

発行年:

1996

開始ページ:

159

終了ページ:

167

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771634 [1566771633]

言語:

英語

請求記号:

E23400/962353

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013844
シリーズID:	PA00000028
会議名:	Symposium on III-V Nitride Materials and Processes
回次:	1st
会議開催地:	Los Angeles, CA. USA
会議開催年:	1996.05.06-1996.05.08

類似資料:

1 国際会議録 Parametric Study of Compound Semiconductor Etching Utilizing Inductively Coupled Plasma Source Constantine, C., Johnson, D., Barratt, C., Shul, R. J., McClellan, G. B., Briggs, R. D., Rieger, D. J., Karlicek, R. F., … MRS - Materials Research Society	7 国際会議録 ECR Etching of Group-III Nitride Binary and Ternary Films Shul, R.J., Howard, A.J., Pearton, S.J., Abernathy, C.R., Variuli, C.B., Barnes, P.A. Electrochemical Society
2 国際会議録 ICP Etching of GaAs Via Hole Contacts Shul, R.J., Baca, A.G., Briggs, R.D., McClellan, G.B., Pearton, S.J., Constantine, C. Electrochemical Society	8 国際会議録 High Rate ECR Etching of III-V Nitride Materials Shul, R.J., Howard, A.J., Kilcoyne, S.P., Pearton, S.J., Abernathy, C.R., Vartuli, C.B., Barnes, P.A., Bozack, M.J. Electrochemical Society
3 国際会議録 ICP Dry Etching of III-V Nitrides Vartuli, C. B., Lee, J. W., MacKenzie, J. D., Donovan, S. M., Abernathy, C. R., Pearton, S. J., Shul, R. J., … MRS - Materials Research Society	9 国際会議録 High Rate Dry Etching of GaN, AIN and InN in ECR Cl2/CH4/H2/Ar Plasmas Vartuli, C. B., Pearton, S. J., Abernathy, C. R., Shul, R. J., Kilcoyne, S. P., Crawford, M. Hagerott, Howard, A. J., … MRS - Materials Research Society
4 国際会議録 Plasma-Induced-Damage of GaN Shul, R.J., Zolper, J.C., Hagerott Crawford, M., Hickamn, R.J., Briggs, R.D., Pearton, S.J., Lee, J.W., Karlicek, R.F., … Electrochemical Society	10 国際会議録 High Microwave Power ECR Etching of III-V Semiconductors in CH4/H2/Ar Lee, J.W., Pearton, S.J., Lambers, E.S., Mileham, J.R., Abernathy, C.R., Hobson, W.S., Ren, F., Shul, R.J. Electrochemical Society
5 国際会議録 Chlorine-Based Plasma Etching of GaN Shul, R. J., Briggs, R. D., Pearton, S. J., Vartuli, C. B., Abernathy, C. R., Lee, J. W., Constantine, C., Barratt, C. MRS - Materials Research Society	11 国際会議録 Ultrahigh Implant Activation Efficiency in GaN Using Novel High Temperature RTP System Cao, X. A., Abernathy, C. R., Singh, R. K., Pearton, S. J., Fu, M., Sarvepalli, V., Sekhar, J. A., Zolper, J. C., … MRS - Materials Research Society
6 国際会議録 Plasma Chemistry Dependent ECR Etching of GaN Shul, R. J., Ashby, C. I. H., Rieger, D. J., Howard, A. J., Pearton, S. J., Abernathy, C. R., Vartuli, C. B., Barnes, P. … MRS - Materials Research Society	12 国際会議録 OPTICAL EMISSION END-POINT DETECTION FOR VIA HOLE ETCHING IN InP AND GaAs POWER DEVICE STRUCTURES Pearton, S. J., Ren, F., Abernathy, C. R., Constantine, C. MRS - Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12