III-Nitride ion implantation and device processing

III-Nitride ion implantation and device processing

著者名:

Zolper, J.C.

掲載資料名:

Proceedings of the First Symposium on III-V Nitride Materials and Processes

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

96-11

発行年:

1996

開始ページ:

149

終了ページ:

158

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771634 [1566771633]

言語:

英語

請求記号:

E23400/962353

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013844
シリーズID:	PA00000028
会議名:	Symposium on III-V Nitride Materials and Processes
回次:	1st
会議開催地:	Los Angeles, CA. USA
会議開催年:	1996.05.06-1996.05.08

類似資料:

1 国際会議録 Ion Implantation Processing for High-Speed GaAs JFETS Zolper, J.C., Baca, A.G., Sherwin, M.E., Shul, R.J. Electrochemical Society	7 国際会議録 Dry Etching and Implantation Characteristics of III-N Alloys Pearton, S.J., Vartuli, C.B., Shul, R.J., Zolper, J.C. Electrochemical Society
2 国際会議録 Status of Ion Implantation Doping and Isolation of III-V Nitrides Zolper, J.C., Pearton, S.J., Abernathy, C.R., Vartuli, C. B., Yuan, C., Stall, R.A. Electrochemical Society	8 国際会議録 High-density plasma-induced etch damage of GaN Shul, R.J., Zhang, L., Baca, A.G., Willison, C.G., Han, J., Pearton, S.J., Ren, F., Zolper, J.C., Lester, L.F. Materials Research Society
3 国際会議録 Device Processing of Wide Bandgap Semiconductors - Challenges and Directions Pearton, S.J., Ren, F., Shul, R.J., Zolper, J.C. Electrochemical Society	9 国際会議録 Ion Implantation in Compound Semiconductors for High-Performance Electronic Devices Zolper, J.C., Baca, A.G., Sherwin, M.E., Klem, J.F. Electrochemical Society
4 国際会議録 Electrical and Optical Properties of C, O and H in III-V Nitrides Pearton, S.J., Lee, J.W., Abernathy, C.R., Wilson, R.G., Zavada, J.M., Zolper, J.C. Electrochemical Society	10 国際会議録 0.5 μm E/D AlGaAs/GaAs Heterostructure Field Effect Transistor Technology with DEFT Threshold Adjust Implant Baca, A.G., Sherwin, M.E., Zolper, J.C., Shul, R.J., Briggs, R.D., Heise, J.A., Robertson, P.J., Hafich, M.F. Electrochemical Society
5 国際会議録 Hydrogen Incorporation into III-V Nitrides During Processing Pearton, S.J., Shul, R.J., Wilson, R.G., Ren, F., Zavada, J.M., Abernathy, C.R., Vartuli, C.B., Lee, J.W., Mileham, … Electrochemical Society	11 国際会議録 Ion Implantation in Wide Bandgap Semiconductors: Device Needs and Technological Challenges Zolper, J.C., Pearton, S.J. Electrochemical Society
6 国際会議録 The Role of AlN Encapsulation of GaN During Implant Activation Annealing Zolper, J.C., Pearton, S.J., Rieger, D.J., Baca, A.G., Lee, J.W., Vartulli, C.R., Stall, R.A. Electrochemical Society	12 国際会議録 Role of C. O and H in III-Nitrides Abernathy, C. R., Pearton, S. J., Mackenzie, J. D., Lee, J. W., Vartuli, C. B., Wilson, R. G., Shul, R. J., Zolper, J. … MRS - Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12