Plasma Enhanced Chemical Vapor Deposition of Silicon Dioxide and Nitride Films Using the Enviromnentally Benign Precursor Diethylsilane

Plasma Enhanced Chemical Vapor Deposition of Silicon Dioxide and Nitride Films Using the Enviromnentally Benign Precursor Diethylsilane

著者名:

掲載資料名:

Proceedings of the Thirteenth International Symposium on Chemical Vapor Deposition

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

96-5

発行年:

1996

開始ページ:

510

終了ページ:

515

総ページ数:

6

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771559 [1566771552]

言語:

英語

請求記号:

E23400/962104

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013838
シリーズID:	PA00000028
会議名:	International Symposium on Chemical Vapor Deposition - CVD
回次:	13th
会議開催地:	Los Angeles, CA, USA
会議開催年:	1996.05.05-1996.05.10

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