Blank Cover Image

Net Point Defect Concentrations After Ion Implantation in Silicon

著者名:
Hobler, G.  
掲載資料名:
Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
96-4
発行年:
1996
開始ページ:
509
終了ページ:
522
出版情報:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566771542 [1566771544]
言語:
英語
請求記号:
E23400/961823
資料種別:
国際会議録

類似資料:

1 国際会議録 CRITICAL ANGELS FOR ION CHANNELING IN SILICON

Hobler, G.

Electrochemical Society
7 国際会議録 Residual defects after pulsed laser annealing of ion implanted silicon

Mesli, a., Muller, J.C., Salles, D., Siffert, P.

North Holland
2 国際会議録 Comparison of Damage Accumulation Models for Boron Implantation in Silicon

Simionescu, A., Hobler, G.

MRS - Materials Research Society
8 国際会議録 Coupled Kinetic Monte Carlo and Molecular Dynamics Simulations of Implant Damage Accumulation in Silicon

Otto, Gustav, Hobler, Gerhard

Materials Research Society
3 国際会議録 In Situ Photoexcitation-Induced Suppression of Point Defect Generation in Ion Implanted Silicon

Cho, C. R., Yarykin, N., Rozgonyi, G. A., Zuhr, R. A.

MRS - Materials Research Society
9 国際会議録 COMPUTER SIMULATION OF THE INFLUENCE OF POINT AND EXTENDED DEFECTS ON THE PRECIPITATION OF OXYGEN DURING RAPID THERMAL PROCESSING

Esfandyari, J., Senkader, S., Hobler, G., Poetzl, H., Murphy, B.

Electrochemical Society
4 国際会議録 Photoexcitation Induced Suppression of Point Defect Formation during Ion Implantation in Silicon

Cho, C.R., Yarykin, N., Rozgonyi, G.A., Zuhr, R.A.

Electrochemical Society
10 国際会議録 ELECTRONIC STOPPING OF CHANNELED IONS IN SILICON

Hobler, Gerhard, Potzl, Hans W.

Materials Research Society
5 国際会議録 Atomistic simulation of the isotope effect on defect formation in H/D-implanted Si

Zahel, T., Otto, G., Hobler, G.

Electrochemical Society
11 国際会議録 Rapid Migration of Defects in Ion-Implanted Silicon

Lalita, J., Pellegrino, P., Hallen, A., Svensson, B. G., Keskitalo, N., Fatima, S., Jagadish, C.

MRS - Materials Research Society
6 国際会議録 Fluence Dependence of the Formation of Open-Volume Defects in Silicon After Ion Implantation

Eichler,S., Borner,F., Gebauer,J., Krause-Rehberg,R.

Trans Tech Publications
12 国際会議録 Modelling of {311} Defects

Hobler, G., Rafferty, C. S.

MRS - Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12