Modeling of SiO2 Stress Relaxation and Stress Dependent Oxidation

Modeling of SiO2 Stress Relaxation and Stress Dependent Oxidation

著者名:

掲載資料名:

Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

96-4

発行年:

1996

開始ページ:

417

終了ページ:

428

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771542 [1566771544]

言語:

英語

請求記号:

E23400/961823

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013837
シリーズID:	PA00000028
会議名:	International Symposium on Process Physics and Modeling in Semiconductor Technology ; Spring Meeting of the Electrochemical Society
回次:	4th ; 1996
会議開催地:	Los Angeles, California, USA
会議開催年:	1996.05.05-1996.05.10

類似資料:

1 国際会議録 Boron Diffusion in Oxide - Effect of Incorporated Nitrogen and Fluorine Navi, M., Dunham, S.T., Kim, B.Y., Kwong, D.L. Electrochemical Society	7 国際会議録 Ultrathin Oxide Reliability: Effects of Gate Doping Concentration and Poly- Si/SiO2 Interface Stress Relaxation Wristers, D., Wang, H.H., Han, L.K., Lin, C., Chen, T.S., Kwong, D.L., Fulford, J. Electrochemical Society
2 国際会議録 MODELING OF PHOSPHORUS DIFFUSION IN SILICON Dunham, S.T. Electrochemical Society	8 国際会議録 Models and Parameters for the Coupled Diffusion of Dopants and Point Defects in Silicon Dunham, S.T., Wittel, F. Electrochemical Society
3 国際会議録 MODELS FOR THE PHYSICAL EXETEN OF POINT DEFECT INTER ACTIONS IN SILICON Agarwal, A.M., Dunham, S.T. Electrochemical Society	9 国際会議録 Modeling of Transient Enhanced Diffusion Based on Evolution of {311} Defects Gencer, A.H., Dunham, S.T. Electrochemical Society
4 国際会議録 Modeling Interactions of Point Defects with Precipitates Using the Reduced Precipitation Model Clejan, I., Dunham, S.T. Electrochemical Society	10 国際会議録 KINETICS OF DOPANT PRECIPITATION IN SILICON Dunham, S.T. Electrochemical Society
5 国際会議録 A Reduced Moment-Based Model for Precipitation Kinetics and Application to Dopant Activation in Silicon Clejan, I., Dunham, S.T. Electrochemical Society	11 国際会議録 DOPANT DIFFUSION IN POLYSILLCON Matsuoka, M.A., Dunham, S.T. Electrochemical Society
6 国際会議録 Two Stream Model for Dopant Diffusion in Polysilicon Incorporating Effects of Grain Growth Banerice, S., Dunham, S.T. Electrochemical Society	12 国際会議録 Spatial Variations in Point Defect Concentrations and Their Impact on Submicron Device Structures Dunham, S.T., Agarwal, A.M. Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12