The Effect of TiSi2 Film Thickness and Growth on the Point Defect Perturbance in Si
- 著者名:
Hemer, S.B. Jones, K.S. Gossman, H.-J. Tung, R.T. Poate, J.M. Luftman, H.S. - 掲載資料名:
- Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology
- シリーズ名:
- Electrochemical Society Proceedings Series
- シリーズ巻号:
- 96-4
- 発行年:
- 1996
- 開始ページ:
- 337
- 終了ページ:
- 347
- 出版情報:
- Pennington, NJ: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566771542 [1566771544]
- 言語:
- 英語
- 請求記号:
- E23400/961823
- 資料種別:
- 国際会議録
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9
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Scanning Electrochemical Microscopy of Electron-Transfer Reactions at Thin Films of TiO2 and Ta2O5
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