Models and Parameters for the Coupled Diffusion of Dopants and Point Defects in Silicon

Models and Parameters for the Coupled Diffusion of Dopants and Point Defects in Silicon

著者名:

掲載資料名:

Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

96-4

発行年:

1996

開始ページ:

27

終了ページ:

36

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771542 [1566771544]

言語:

英語

請求記号:

E23400/961823

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013837
シリーズID:	PA00000028
会議名:	International Symposium on Process Physics and Modeling in Semiconductor Technology ; Spring Meeting of the Electrochemical Society
回次:	4th ; 1996
会議開催地:	Los Angeles, California, USA
会議開催年:	1996.05.05-1996.05.10

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